Numerical Modelling of the Czochralski Growth of β-Ga2O3
نویسندگان
چکیده
منابع مشابه
Numerical Modelling of the Czochralski Growth of -Ga2O3
Our numerical modelling of the Czochralski growth of single crystalline β-Ga2O3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga2O3 crystal. In order to perform the stress analysi...
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Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
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The Czochralski method of the industrial production of a silicon single crystal consists of pulling up the single crystal from the silicon melt. The flow of the melt during the production is called the Czochralski flow. The mathematical description of the flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), hea...
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For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...
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ژورنال
عنوان ژورنال: Crystals
سال: 2017
ISSN: 2073-4352
DOI: 10.3390/cryst7010026